AUFR2405-VB AUFR2405-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 58 56 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: D TO-252 www.VBsemi.com G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless other.
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
D TO-252
www.VBsemi.com
G
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
58 48a
Pulsed Drain Current
IDM
100
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8.3b.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUFS3006 |
VBsemi |
N-Channel MOSFET | |
2 | AUFS3306 |
VBsemi |
N-Channel MOSFET | |
3 | AUFS4410Z |
VBsemi |
N-Channel MOSFET | |
4 | AU01 |
Sanken electric |
Fast Recovery Diode | |
5 | AU01 |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
6 | AU01 |
Hitachi |
ZENER DIODE | |
7 | AU01A |
Sanken electric |
Fast Recovery Diode | |
8 | AU01A |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
9 | AU01Z |
Sanken electric |
Fast Recovery Diode | |
10 | AU01Z |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
11 | AU02 |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
12 | AU02 |
Sanken electric |
Fast Recovery Diode |