AS8ERLC128K32 - Micross

AS8ERLC128K32 128K x 32 Radiation Tolerant EEPROM

EEPROM AS8ERLC128K32 128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 FEATURES • Access time of 250ns , 300ns • Operation with single 3.3V (+ .3V) supply • LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode • Automatic Byte Write: 15 ms (MA.

Features

• Access time of 250ns , 300ns
• Operation with single 3.3V (+ .3V) supply
• LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode
• Automatic Byte Write: 15 ms (MAX)
• Automatic Page Write (128 bytes): 15 ms (MAX)
• Data protection circuit on power -on/off
• Low power CMOS MNOS cell Technology
• 104 Erase/Write cycles (in Page Mode)
• Software data protection
• TTL Compatible Inputs and Outputs
• Data Retention: 10 years
• Ready/Busy and Data Polling Signals
• Write protection by RES pin
• Radiation Tolerant: Proven t.