AS8ERLC128K32 |
Part Number | AS8ERLC128K32 |
Manufacturer | Micross |
Description | EEPROM AS8ERLC128K32 128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 FEATURES • Access time of 250ns , 300ns • Operation with single 3.3V (+ .3V) supply • LOW... |
Features |
• Access time of 250ns , 300ns • Operation with single 3.3V (+ .3V) supply • LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode • Automatic Byte Write: 15 ms (MAX) • Automatic Page Write (128 bytes): 15 ms (MAX) • Data protection circuit on power -on/off • Low power CMOS MNOS cell Technology • 104 Erase/Write cycles (in Page Mode) • Software data protection • TTL Compatible Inputs and Outputs • Data Retention: 10 years • Ready/Busy and Data Polling Signals • Write protection by RES pin • Radiation Tolerant: Proven t... |
Document |
AS8ERLC128K32 Data Sheet
PDF 461.97KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AS8ER128K32 |
Austin Semiconductor |
128K x 32 Radiation Tolerant EEPROM | |
2 | AS8ER128K32 |
Micross |
128K x 32 Radiation Tolerant EEPROM | |
3 | AS8E128K32 |
Austin Semiconductor |
128K x 32 EEPROM | |
4 | AS8E128K32 |
Micross |
128K x 32 EEPROM | |
5 | AS8E32K32 |
Austin Semiconductor |
32K x 32 EEPROM |