Austin Semiconductor, Inc. EEPROM AS8ER128K32 128K x 32 RadiationTolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-94585 FEATURES • Access time of 150ns, 200ns, 250ns • Operation with single 5V + 10% supply • Power Dissipation: Active: 1.43 W (MAX), Max Speed Operation Standby: 7.7 mW (MAX), Battery Back-up Mode • Automatic Byte.
• Access time of 150ns, 200ns, 250ns
• Operation with single 5V + 10% supply
• Power Dissipation:
Active: 1.43 W (MAX), Max Speed Operation Standby: 7.7 mW (MAX), Battery Back-up Mode
• Automatic Byte Write: 10 ms (MAX)
• Automatic Page Write (128 bytes): 10 ms (MAX)
• Data protection circuit on power on/off
• Low power CMOS
• 104 Erase/Write cycles (in Page Mode)
• Software data protection
• TTL Compatible Inputs and Outputs
• Data Retention: 10 years
• Ready/Busy and Data Polling Signals
• Write protection by RES pin
• Radiation Tolerant: Proven total dose 40K to 100K RADS
*
• Shielded Packag.
EEPROM AS8ER128K32 128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 FEATURES • .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AS8ERLC128K32 |
Micross |
128K x 32 Radiation Tolerant EEPROM | |
2 | AS8E128K32 |
Austin Semiconductor |
128K x 32 EEPROM | |
3 | AS8E128K32 |
Micross |
128K x 32 EEPROM | |
4 | AS8E32K32 |
Austin Semiconductor |
32K x 32 EEPROM | |
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