TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K www.DataSheet4U.com APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a res.
erwise specified. APT30GN60K(G) UNIT Volts 600 ±30 63 37 75 75A @ 600V 203 -55 to 175 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 430µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.1 5.8 1.5 1.7 25 2 6.5 1.9 Volts Collector-Emitter On Voltage (VGE .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT30GN60B |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
2 | APT30GN60BDQ2 |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
3 | APT30GN60BDQ2G |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
4 | APT30GN60BG |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
5 | APT30GN60KG |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
6 | APT30GN60S |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
7 | APT30GN60SDQ2 |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
8 | APT30GN60SDQ2G |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
9 | APT30GN60SG |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
10 | APT30GF60JU2 |
Microsemi Corporation |
ISOTOP Boost chopper NPT IGBT | |
11 | APT30GF60JU3 |
Microsemi Corporation |
ISOTOP Buck chopper NPT IGBT | |
12 | APT30GP60B |
Advanced Power Technology |
POWER MOS 7 IGBT |