APT30GN60S - Microsemi Corporation

APT30GN60S Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES APT30GN60B APT30GN60B_S(G) APT30GN60S APT30GN60B(G) APT30GN60S(G) www.DataSheet4U.com 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss.

Features

sed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT30GN60B_S(G) UNIT Volts 600 ±30 63 37 90 90A @ 600V 203 -55 to 175 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 430µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.1 5.8 1.5 .