APT30GN60K |
Part Number | APT30GN60K |
Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
Description | TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K www.DataSheet4U.com APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technol... |
Features |
erwise specified.
APT30GN60K(G) UNIT Volts
600 ±30 63 37 75 75A @ 600V 203 -55 to 175
Amps
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 430µA, Tj = 25°C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 25
2
6.5 1.9
Volts
Collector-Emitter On Voltage (VGE ... |
Document |
APT30GN60K Data Sheet
PDF 164.46KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT30GN60B |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
2 | APT30GN60BDQ2 |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
3 | APT30GN60BDQ2G |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
4 | APT30GN60BG |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
5 | APT30GN60KG |
Microsemi Corporation |
Resonant Mode Combi IGBT |