APT20GF120BR APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VGE I C.
Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) MIN TYP MAX UNIT 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0 ±100 052-6214 Rev B 11-2000 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT20GF120BRD |
Advanced Power Technology |
The Fast IGBT is a new generation of high voltage power IGBTs. | |
2 | APT20GF120KR |
Advanced Power Technology |
The Fast IGBT is a new generation of high voltage power IGBTs. | |
3 | APT20GN60B |
Advanced Power Technology |
IGBT | |
4 | APT20GN60B |
Microsemi Corporation |
Thunderbolt High Speed NPT IGBT | |
5 | APT20GN60BDQ1 |
Advanced Power Technology |
IGBT | |
6 | APT20GN60BDQ1 |
Microsemi Corporation |
High Speed PT IGBT | |
7 | APT20GN60BDQ1G |
Advanced Power Technology |
IGBT | |
8 | APT20GN60BDQ1G |
Microsemi Corporation |
High Speed PT IGBT | |
9 | APT20GN60BG |
Advanced Power Technology |
IGBT | |
10 | APT20GN60BG |
Microsemi Corporation |
Thunderbolt High Speed NPT IGBT | |
11 | APT20GN60K |
Microsemi Corporation |
High Speed PT IGBT | |
12 | APT20GN60KG |
Microsemi Corporation |
High Speed PT IGBT |