APT20GN60KG - Microsemi Corporation

APT20GN60KG High Speed PT IGBT

TYPICAL PERFORMANCE CURVES APT20GN60K(G) 600V APT20GN60K APT20GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight pa.

Features

20GN60K(G) UNIT Volts 600 ±30 40 24 60 60A @ 600V 136 -55 to 175 Amps @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.1 5.8 1.5 1.7 25 2 6.5 1.9 Volts Collector-Emitter On Voltage (VGE = 15V,.