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TYPICAL PERFORMANCE CURVES APT20GN60BDQ1 APT20GN60BD_SDQ1(G) APT20GN60SDQ1 APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Ea.
Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT20GN60BD_SDQ1(G) UNIT Volts 600 ±30 40 24 60 60A @ 600V 136 -55 to 175 Amps @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C) MIN TYP MAX Units 600 5.
APT20GN60BDQ1 - Advanced Power Technology
TYPICAL PERFORMANCE CURVES ® APT20GN60BDQ1 APT20GN60BDQ1G* APT20GN60BDQ1(G) 600V *G Denotes RoHS Compliant, Pb Free T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT20GN60BDQ1G |
Advanced Power Technology |
IGBT |
|
| 2 | APT20GN60BDQ1G |
Microsemi Corporation |
High Speed PT IGBT |
|
| 3 | APT20GN60B |
Advanced Power Technology |
IGBT |
|
| 4 | APT20GN60B |
Microsemi Corporation |
Thunderbolt High Speed NPT IGBT |
|
| 5 | APT20GN60BG |
Advanced Power Technology |
IGBT |
|
| 6 | APT20GN60BG |
Microsemi Corporation |
Thunderbolt High Speed NPT IGBT |
|
| 7 | APT20GN60K |
Microsemi Corporation |
High Speed PT IGBT |
|
| 8 | APT20GN60KG |
Microsemi Corporation |
High Speed PT IGBT |
|
| 9 | APT20GN60S |
Microsemi Corporation |
Thunderbolt High Speed NPT IGBT |
|
| 10 | APT20GN60SDQ1 |
Microsemi Corporation |
High Speed PT IGBT |
|
| 11 | APT20GN60SDQ1G |
Microsemi Corporation |
High Speed PT IGBT |
|
| 12 | APT20GN60SG |
Microsemi Corporation |
Thunderbolt High Speed NPT IGBT |
|