APL502LG - Microsemi

APL502LG LINEAR MOSFET

APL502B2(G) APL502L(G) 500V, 58A, 0.090Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). T-MaxTM TO-264 • Higher FBSOA • Popular T-MAX™ or TO-264 Package • Higher Powe.

Features

Energy 4 -55 to 150 300 58 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 (VGS = 12V, 29A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 500 58 2 .