APL502J - Advanced Power Technology

APL502J LINEAR MOSFET

APL502J 500V 52A 0.090Ω LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). G S D S SO ISOTOP ® 2 T- 27 "UL Recognized" www.DataSheet4U.com • Higher FBSOA • Popular SOT-227 Package G D • Higher Power Dissipation MAXIM.

Features

Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 52 0.09 25 (VDS > I D(ON) x R DS(ON) Max, VGS = 12V) 2 Drain-Source On-State Resistance (VGS = 12V, 26A) Ohms µA Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 25.