D P-Pack G S APL501P 500V 43.0A 0.12W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temper.
Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 ±100 2 4 nA Volts THERMAL CHARACTERISTICS Symbol RQJC RQCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT °C/W 0.24 0.06 8-2001 050-5898 Rev - CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APL5015 |
ANPEC |
4-Channels LED Gate Driver | |
2 | APL501J |
Advanced Power Technology |
N-Channel MOSFET | |
3 | APL502B2 |
Advanced Power Technology |
LINEAR MOSFET | |
4 | APL502B2 |
Microsemi |
LINEAR MOSFET | |
5 | APL502B2G |
Microsemi |
LINEAR MOSFET | |
6 | APL502J |
Advanced Power Technology |
LINEAR MOSFET | |
7 | APL502L |
Advanced Power Technology |
LINEAR MOSFET | |
8 | APL502L |
Microsemi |
LINEAR MOSFET | |
9 | APL502LG |
Microsemi |
LINEAR MOSFET | |
10 | APL5101 |
Anpec Electronics |
Quiescent Current Regulator | |
11 | APL5102 |
Anpec Electronics |
Quiescent Current Regulator | |
12 | APL5151 |
Anpec Electronics |
Voltage Regulator |