AP9412GI - Advanced Power Electronics

AP9412GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM .

Features

nction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 65 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805142 AP9412GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A Min. 30 0.8 - Typ. 30 26 4.6 16 10 7 36 20 450 295 Max. Units 6 8 2.5 10 ±100 42 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate.