AP9412GP - Advanced Power Electronics

AP9412GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widly preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G D TO-220(P) S Absolute Maximum Ratings .

Features

mal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.8 62 Units ℃/W ℃/W 1 200903092 Data and specifications subject to change without notice AP9412GP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A Min. 30 1 - Typ. 60 26 4.6 16 10 7 36 20 450 295 0.9 Max. Units 6 8 2.5 1 250 +100 42 1.35 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF.