AP9412GI |
Part Number | AP9412GI |
Manufacturer | Advanced Power Electronics |
Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package i... |
Features |
nction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 65 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200805142
AP9412GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A
Min. 30 0.8 -
Typ. 30 26 4.6 16 10 7 36 20 450 295
Max. Units 6 8 2.5 10 ±100 42 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate... |
Document |
AP9412GI Data Sheet
PDF 111.05KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP9412GH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP9412GI-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP9412GJ |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP9412GP |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP9412AGH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |