AP83T03GMT-HF - Advanced Power Electronics

AP83T03GMT-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

□ Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink. S S S G ® PMPAK 5x6 Absolute Maximum Ratings Symbo.

Features

tion Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 2.5 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201101201 AP83T03GMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd t.