AP83T03AGH-HF - Advanced Power Electronics

AP83T03AGH-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applicati.

Features

ipation3 Storage Temperature Range Operating Junction Temperature Range BVDSS RDS(ON) ID 30V 6.5mΩ 66A G D S TO-252(H) Rating 30 +20 66 42 160 50 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Data & specifications subject to change without notice Value 2.5 62.5 Units ℃/W ℃/W 1 201305171 AP83T03AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) .