AP83T03AGMT-HF - Advanced Power Electronics

AP83T03AGMT-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 ppackage is special for voltage conversion application using standard inf.

Features

V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 30 +20 71 23.2 18.6 200 50 5 45 -55 to 150 -55 to 150 V V A A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 2.5 25 Unit ℃/W ℃/W 1 201412183 AP83T03AGMT-HF Electrical Characteristics@Tj=25oC(unless otherwise.