AP70SL500AP - Advanced Power Electronics

AP70SL500AP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70SL500A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial-industrial through hole applica.

Features

rain Current, VGS @ 10V3 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Peak Diode Recovery dv/dt5 700 +20 8.8 5.6 20 50 78.1 2 48 15 V V A A A V/ns W W mJ V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 1.6 62 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201505191 AP70.