AP70SL1K4AJB - Advanced Power Electronics

AP70SL1K4AJB N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70SL1K4A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole app.

Features

ss (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Peak Diode Recovery dv/dt5 700 +20 3.2 2.1 8.3 50 28.4 1.13 27 15 V V A A A V/ns W W mJ V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 4.4 110 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201507271 AP70SL1K4AJB Electrical Characteristics@Tj=25oC(unless otherwise s.