AP70SL1K4AH - Advanced Power Electronics

AP70SL1K4AH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70SL1K4A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for commercial-industrial surface mount applicati.

Features

A 2.1 A 8.3 A dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 50 28.4 2 27 15 V/ns W W mJ V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient4 Value 4.4 62.5 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201507271 AP70SL1K4AH Electrical Ch.