AP6679GJ - Advanced Power Electronics

AP6679GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Param.

Features

rameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200811053 www.DataSheet4U.com AP6679GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.03 Max. Units 9 15 -3 -1 -25 +100 67 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) gfs .