AP4439GMT-HF - Advanced Power Electronics

AP4439GMT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4439 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK® 5x6 package is special for voltage conversion application using standard infrare.

Features

VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range -30 +25 -58 -18.5 -14.8 -200 50 5 -55 to 150 -55 to 150 V V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 2.5 25 Unit ℃/W ℃/W 1 201409102AP AP4439GMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions .