AP4433GI-HF - Advanced Power Electronics

AP4433GI-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4433 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applicat.

Features

VGS @ 10V Pulsed Drain Current 1 Rating -30 +20 -21 -13.3 -80 20.8 1.92 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient Value 6.0 65 Units ℃/W ℃/W 1 201203121 Data and specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP4433GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON.