AP2329GN-HF - Advanced Power Electronics

AP2329GN-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@.

Features

er Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 201208152 Data and specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP2329GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A Min. -30 -1 - Typ. 38.5 60 -1.5 8 5.7 1.5 2.8 6 8 20 12 465 100 90 8 Max. Units 48 85 -3 -10 +100 9.1 740 16 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) g.