AP2324GN-HF - Advanced Power Electronics

AP2324GN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2324 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all c.

Features

Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 20 +12 6 4.8 24 1.38 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201501213 AP2324GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-S.