The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TS.
n-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200227032 www.DataSheet4U.com AP15N03H/J Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 ` - Typ. 0.037 Max. Units 80 100 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Cr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP15N03GH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP15N03GH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP15N03GI |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP15N03GJ |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP15N03GJ-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP15N03GP |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP15N03H |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
8 | AP15N03P |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
9 | AP1501 |
Anachip |
3A PWM Buck DC/DC Converter | |
10 | AP1501 |
Diodes Incorporated |
3A PWM BUCK DC/DC CONVERTER | |
11 | AP1501A |
Anachip |
5A PWM Buck DC/DC Converter | |
12 | AP1501A |
Diodes |
5A PWM BUCK DC/DC CONVERTER |