AP15N03GP - Advanced Power Electronics

AP15N03GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circui.

Features

rage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200722051-1/6 www.DataSheet4U.com AP15N03GP Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 ` - Typ. 0.037 Max. Units 80 100 3 1 25 ±100 V V/℃ mΩ mΩ V uA uA nA nC nC nC ns ns ns ns pF pF pF Bre.