TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ P.
rmal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.8 62.5 110 Unit ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 1 200811193 AP15N03GH/J-HF Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 ` - Typ. 0.037 Max. Units 80 100 3 1 25 +100 V V/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP15N03GJ |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP15N03GH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP15N03GH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP15N03GI |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP15N03GP |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP15N03H |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
7 | AP15N03K |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
8 | AP15N03P |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
9 | AP1501 |
Anachip |
3A PWM Buck DC/DC Converter | |
10 | AP1501 |
Diodes Incorporated |
3A PWM BUCK DC/DC CONVERTER | |
11 | AP1501A |
Anachip |
5A PWM Buck DC/DC Converter | |
12 | AP1501A |
Diodes |
5A PWM BUCK DC/DC CONVERTER |