AP09N20J-HF - Advanced Power Electronics

AP09N20J-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for lo.

Features

Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200809112 Free Datasheet http://www.datasheet4u.com/ AP09N20H/J-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage.