AP02N60I - Advanced Power Electronics

AP02N60I N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Ga.

Features

Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5.7 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200117032 AP02N60I www.DataSheet4U.com Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID.