AP02N60H - Advanced Power Electronics

AP02N60H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-.

Features

Operating Junction Temperature Range 64 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Units ℃/W ℃/W 200705051-1/4 Data & specifications subject to change without notice AP02N60H/J www.DataSheet4U.com Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 ±100 20 240 V V/℃ Ω V S uA u.