AP02N60I-A-HF - Advanced Power Electronics

AP02N60I-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power supplies, AC-DC converters and high current high speed switching circuits. G DS TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source.

Features

80 2 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.7 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 201305094 AP02N60I-A-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 +100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature.