Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting. 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top.
rain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
TC=25°C Power Dissipation B Derate above 25°C
VGS
ID
IDM IAR EAR EAS dv/dt
PD
±30
8.5
8.5
*
5
5
*
34
2.1
2.2
19
100 20
104
27
0.8
0.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
-55 to 150 300
Units V V V
A
A mJ mJ V/ns W W/°C °C
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RqJA RqCS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOTF600A60L |
Alpha & Omega Semiconductors |
600V N-Channel Power Transistor | |
2 | AOTF66613L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET | |
3 | AOTF66811L |
Alpha & Omega Semiconductors |
80V N-Channel MOSFET | |
4 | AOTF6N90 |
INCHANGE |
N-Channel MOSFET | |
5 | AOTF6N90 |
Alpha & Omega Semiconductors |
6A N-Channel MOSFET | |
6 | AOTF095A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor | |
7 | AOTF10N50FD |
INCHANGE |
N-Channel MOSFET | |
8 | AOTF10N50FD |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
9 | AOTF10N50FDL |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
10 | AOTF10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
11 | AOTF10N60 |
INCHANGE |
N-Channel MOSFET | |
12 | AOTF10N65 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |