AOTF600A60L - Alpha & Omega Semiconductors

AOTF600A60L 600V N-Channel Power Transistor

Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power 100% UIS Tested 10.

Features

TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 8 8
* 5 5
* 32 1.6 1.3 19 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 96 0.8 27.5 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,.