AOT66919L - Alpha & Omega Semiconductors

AOT66919L 100V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 105A < 6.8mΩ < 8.8mΩ Applications • High Frequency Switching and Synchronous Rectification 100% UIS Tested 100% Rg Tested Max Tj=175°C Top.

Features

TJ, TSTG Maximum 100 ±20 105 79 220 25 21 48 115 187 93 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.6 Max 15 60 0.8 Units °C/W °C/W °C/W Rev 1.1: May 2024 www.aosmd.com Page 1 of 6 AOT66919L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain.