Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power 100% UIS Tested 10.
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
±30
8
8
*
5
5
*
32
1.6
1.3
19 100 20
TC=25°C Power Dissipation B Derate above 25°C
PD
96 0.8
27.5 0.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
-55 to 150 300
Units V V V
A
A mJ mJ V/ns W W/°C °C
°C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOT600A70L |
Alpha & Omega Semiconductors |
700V N-Channel Power Transistor | |
2 | AOT66613L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET | |
3 | AOT66616L |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
4 | AOT66620L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET | |
5 | AOT66914L |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET | |
6 | AOT66918L |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET | |
7 | AOT66919L |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET | |
8 | AOT095A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor | |
9 | AOT101 |
ETC |
AOT101 | |
10 | AOT10B60D |
Alpha & Omega Semiconductors |
10A IGBT | |
11 | AOT10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT | |
12 | AOT10B65MQ2 |
Alpha & Omega Semiconductors |
10A AlphaIGBT |