• Trench Power AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 120A < 2.5mΩ < 3.0mΩ Applications • High Frequency Switching and Synchronous Rectification • BLDC 100% UIS Tested 100% Rg Tested Top View D .
ion B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 120 120 480 44.5 35.5 48 346 260 104 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.4 Max 15 60 0.48 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOT66613L/AOB66613L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Paramet.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOT66616L |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
2 | AOT66620L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET | |
3 | AOT66914L |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET | |
4 | AOT66918L |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET | |
5 | AOT66919L |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET | |
6 | AOT600A60L |
Alpha & Omega Semiconductors |
600V N-Channel Power Transistor | |
7 | AOT600A70L |
Alpha & Omega Semiconductors |
700V N-Channel Power Transistor | |
8 | AOT095A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor | |
9 | AOT101 |
ETC |
AOT101 | |
10 | AOT10B60D |
Alpha & Omega Semiconductors |
10A IGBT | |
11 | AOT10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT | |
12 | AOT10B65MQ2 |
Alpha & Omega Semiconductors |
10A AlphaIGBT |