Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing.
ess
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
10
10
*
7.2
7.2
*
36
4.4
290
580 45 5
TC=25°C Power Dissipation B Derate above 25oC
PD
250 2
50 0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
AOT10N60/AOB10N60 65 0.5
AOTF10N60 65 --
Maximum Junction-to-Case
RqJC
0.5
2.5
* Drain current limited by maximum junction temperature.
S
Units V V
A
A mJ mJ V/ns W W.
AOT10N60 - INCHANGE
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AOT10N65 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOT10N65 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
|
| 3 | AOT101 |
ETC |
AOT101 |
|
| 4 | AOT10B60D |
Alpha & Omega Semiconductors |
10A IGBT |
|
| 5 | AOT10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT |
|
| 6 | AOT10B65MQ2 |
Alpha & Omega Semiconductors |
10A AlphaIGBT |
|
| 7 | AOT10T60 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 8 | AOT10T60P |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 9 | AOT1100L |
Alpha & Omega Semiconductors |
100V N-CHANNEL MOSFET |
|
| 10 | AOT1100L |
INCHANGE |
N-Channel MOSFET |
|
| 11 | AOT11C60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 12 | AOT11N60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|