Product Summary The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power su.
eak diode recovery dv/dt
VDS VGS
ID
IDM IAR EAR EAS
dv/dt
10 6.6
TC=25°C Power Dissipation B Derate above 25oC
PD
208 1.7
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
RθJA RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT10T60 65 0.5 0.6
G S
AOTF10T60 600 ±30 10
* 6.6
*
40 10 50 480 50 5 43 0.34 -55 to 150
AOTF10T60L 10
* 6.6
*
32 0.26
300
AOTF10T60 65 -2.9.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOT10T60P |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
2 | AOT101 |
ETC |
AOT101 | |
3 | AOT10B60D |
Alpha & Omega Semiconductors |
10A IGBT | |
4 | AOT10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT | |
5 | AOT10B65MQ2 |
Alpha & Omega Semiconductors |
10A AlphaIGBT | |
6 | AOT10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
7 | AOT10N60 |
INCHANGE |
N-Channel MOSFET | |
8 | AOT10N65 |
INCHANGE |
N-Channel MOSFET | |
9 | AOT10N65 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
10 | AOT1100L |
Alpha & Omega Semiconductors |
100V N-CHANNEL MOSFET | |
11 | AOT1100L |
INCHANGE |
N-Channel MOSFET | |
12 | AOT11C60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |