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AOT10N60 |
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| Part Number | AOT10N60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popula... |
| Features |
ess
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
10
10*
7.2
7.2*
36
4.4
290
580 45 5
TC=25°C Power Dissipation B Derate above 25oC
PD
250 2
50 0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
AOT10N60/AOB10N60 65 0.5
AOTF10N60 65 --
Maximum Junction-to-Case
RqJC
0.5
2.5
* Drain current limited by maximum junction temperature.
S
Units V V
A
A mJ mJ V/ns W W... |
| Document |
 AOT10N60 Data Sheet
PDF 554.16KB |
| Distributor | Stock | Price | Buy |
|---|
