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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 772 A PD Total Dissipation @TC=25℃ 187 W TJ Max. Opera.
·Drain Current
–ID= 120A@ TC=25℃
·Drain Source Voltage-
: VDSS= 40V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.3mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
120
A
IDM
Drain Current-Single Pluse
772
A
PD
Total Dissipation @TC=25℃
187
W
TJ
.
AOB2144L - Alpha & Omega Semiconductors
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Opitimized Ruggedness • RoHS and Halogen-Free Comp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AOB2140L |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET |
|
| 2 | AOB2140L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | AOB2146L |
INCHANGE |
N-Channel MOSFET |
|
| 4 | AOB2146L |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET |
|
| 5 | AOB210L |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOB210L |
Freescale |
30V N-Channel MOSFET |
|
| 7 | AOB210L |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET |
|
| 8 | AOB20B65M1 |
Alpha & Omega Semiconductors |
IGBT |
|
| 9 | AOB20S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 10 | AOB20S60 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | AOB20S60L |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 12 | AOB240L |
INCHANGE |
N-Channel MOSFET |
|