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The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 10 µsec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input .
PAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Un it
PDISS IC VCC TJ TSTG
Power Dissipation
* Device Current
*
(TC ≤ 125 °C)
312 8.0 48 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 0.40 °C/W
*Applies only to rated RF amplifie.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AM83135-001 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | AM83135-005 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 3 | AM83135-010 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 4 | AM83135-015 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | AM83135-030 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 6 | AM83135-040 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 7 | Am8316A |
AMD |
ROM |
|
| 8 | Am8316E |
AMD |
2K x 8 ROM |
|
| 9 | AM8303 |
ETC |
OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|
| 10 | AM8304B |
ETC |
OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|
| 11 | AM8307 |
ETC |
(AM8307 / AM8308) OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|
| 12 | AM8308 |
ETC |
(AM8307 / AM8308) OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|