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AM83135-050 |
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| Part Number | AM83135-050 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 10 µsec pulsewidth an... |
| Features |
PAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Un it
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 125 °C)
312 8.0 48 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.40 °C/W
*Applies only to rated RF amplifie... |
| Document |
 AM83135-050 Data Sheet
PDF 93.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AM83135-001 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | AM83135-005 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 3 | AM83135-010 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 4 | AM83135-015 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | AM83135-030 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|