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The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths. duty cycles and temperatures, and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automati.
lications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol Parameter Value Un it
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ TSTG
P ower Dissipation
* Device Current
*
(TC ≤ 100 °C)
40 1.8 34 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage
* J un ction Temperature (Pulsed RF Operation) S torage Temperature
THERMAL DATA RTH(j-c) J un ction-Cas e Thermal R e sistance
* 3.75 °C/W
*Applies only to rated RF a mplifier oper ation
August 23, 1996
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AM83135-005
ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC
Symb ol Test Con ditio ns Value Min. T yp. Max.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AM83135-001 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | AM83135-010 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 3 | AM83135-015 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 4 | AM83135-030 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | AM83135-040 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 6 | AM83135-050 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 7 | Am8316A |
AMD |
ROM |
|
| 8 | Am8316E |
AMD |
2K x 8 ROM |
|
| 9 | AM8303 |
ETC |
OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|
| 10 | AM8304B |
ETC |
OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|
| 11 | AM8307 |
ETC |
(AM8307 / AM8308) OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|
| 12 | AM8308 |
ETC |
(AM8307 / AM8308) OCTAL THREE-STATE BIDIRECTIONAL BUS TRANSCEIVERS |
|