AM81720-012 - STMicroelectronics

AM81720-012 RF & MICROWAVE TRANSISTORS

The AM81720-012 is designed specifically for Telecommunications applications. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/gold metallization system. The unique AMPAC™ devices are housed in Hermetic M.

Features

lector-Supply Voltage
* Junction Temperature Storage Temperature 31.8 1.47 24 200 − 65 to +200 W A V °C °C °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 5.5
*Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. September 1992 1/4 AM81720-012 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO ICBO hFE IC = 5mA IE = 5mA VCB = 24V VCE = 5V IE = 0mA IC = 0mA IC = 1A 45 3.0 — 15 — — — — — — 1.25 15.