AM81214-006 - STMicroelectronics

AM81214-006 RF & MICROWAVE TRANSISTORS

The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bondi.

Features

IMUM RATINGS (T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation
* Device Current
* (TC ≤ 100 °C) 16.7 0.82 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 9.0 °C/W
*Applies only to rated RF amplifier operation AM81214-006 ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Symbo l Test Con dition s Valu e Min. T yp. Max. Un it BVCBO BVCER BVEBO ICES hFE DYNAMIC Symbol IC = 1 mA IC = 5 mA IE = 1 mA VBE = 0 V VCE = 5 V IE = 0 mA .