AM81719-030 - STMicroelectronics

AM81719-030 RF & MICROWAVE TRANSISTORS

The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency. AM81719-030 is supplie.

Features

ply Voltage
* Junction Temperature Storage Temperature 67.3 2.67 28 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 2.6 °C/W
*Applies only to rated RF amplifier operation September 1992 1/4 AM81719-030 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCES ICES hFE DYNAMIC Symbol IC = 10mA IE = 10mA IC = 10mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA VCE = 28V IC = 2mA 45 3.0 45 — 15 — — — — — — — — 5 150 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP f = 1.75 — 1.85G.