FEATURES The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). The device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. 30V / 7.8A, RDS(ON) .
The AM4920 is the Dual N-Channel logic
enhancement mode power field effect transistor is
produced using high cell density. Advanced trench
technology to provide excellent RDS(ON).
The device is suitable for use as a load switch or in
PWM and gate charge for most of the synchronous
buck converter applications.
30V / 7.8A, RDS(ON) =16mΩ (typ.)@VGS=10V 30V / 5.8A, RDS(ON) =28mΩ (typ.)@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Available in SOP8 package
The AM4920 is available in SOP8 Package
ORD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM4920N |
Analog Power |
N-Channel MOSFET | |
2 | AM4922N |
Analog Power |
N-Channel MOSFET | |
3 | AM4924N |
Analog Power |
Dual N-Channel MOSFET | |
4 | AM4926N |
Analog Power |
Dual N-Channel MOSFET | |
5 | AM4929P |
Analog Power |
MOSFET | |
6 | AM4902N |
Analog Power |
Dual N-Channel MOSFET | |
7 | AM4910N |
Analog Power |
Dual N-Channel MOSFET | |
8 | AM4915P |
Analog Power |
Dual P-Channel MOSFET | |
9 | AM4917P |
Analog Power |
P-Channel MOSFET | |
10 | AM4919P |
Analog Power |
P-Channel MOSFET | |
11 | AM4930N |
Analog Power |
Dual N-Channel MOSFET | |
12 | AM4932N |
Analog Power |
N-Channel MOSFET |